USE OF THE CAPACITANCE-VOLTAGE METHOD FOR INVESTIGATING MOS STRUCTURES.

Abstract

The report is intended as a guide in the application of the capacitance-voltage method for determining the electronic properties of metal-oxide-semiconductor structures. The shape and position of capacitance-voltage relationships in C vs V and 1/C to the 2nd power vs V coordinates is presented for eight structural and surface conditions, and qualitative (in some cases also quantitative) correlation of curve parameters to particular MOS models is indicated. Although actually measured CV curves are not expected to coincide fully with these idealized models, agreement in essential curve characteristics usually points to the predominance of that model in practical MOS structures. The report also contains a comprehensive literature reference on this subject. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0654343

Entities

People

  • Herbert L. Mette

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Capacitance
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Literature
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Semiconductors
  • Silicon Carbide
  • Surface Properties

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics