MICROWAVE PROPAGATION IN A SINGLE-CARRIER SEMICONDUCTOR, INCLUDING EFFECTS OF COLLISION AND DIFFUSION.

Abstract

The propagation characteristics of slow electromagnetic waves in a single-carrier semiconductor are derived under the small-signal assumption. The effect of a longitudinal magnetic field is included. The case of an infinite slab of finite thickness is treated for the case of metallic boundaries on both sides. The Brillouin diagram is shown for several values of collision and diffusion parameters, and the attenuation and instability regions are computed. The possibility of using a drifted semiconductor to interact with a slow-wave circuit for microwave generation and amplification is investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0654998

Entities

People

  • Bruno Zotter

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplification
  • Attenuation
  • Boundaries
  • Circuits
  • Collisions
  • Compound Semiconductors
  • Demographic Cohorts
  • Diffusion
  • Electronics
  • Instability
  • Magnetic Fields
  • Microwaves
  • Semiconductors
  • Slow Wave Circuits
  • Solid State Electronics
  • Thickness

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics