MATHEMATICAL INVESTIGATIONS OF SEMICONDUCTOR DEVICES.
Abstract
The report covers a mathematical analysis of the mechanisms of operation with a Small Current Amplifying Device (SCAD). The analysis is in two spatial variables and includes the mixed boundary conditions encountered in a practical semiconductor device. Computer calculated distributions are graphically illustrated to show the space-charge and voltage drop within a source-drain channel, at equilibrium and also throughout a range of biasing conditions. Included in this report is a detailed one-dimensional analysis of the linearly-graded p-n junction. This analysis discusses several modes of operation not characterized by the depletion layer theory: for example, forward bias and reverse bias collector junction operation. A detailed comparison is presented between the results of this rigorous computational investigation, and the results obtained by other authors using more approximate methods of mathematical analysis. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1967
- Accession Number
- AD0655803
Entities
People
- D. P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)