RADIATION STUDY ON MOS STRUCTURES,
Abstract
Two effects of ionizing radiation on oxidized silicon surfaces have been reported: the formation of a space charge in the oxide and the creation of surface states at the oxide-silicon interface. In this report, the effects of processing variables--including substrate type, oxidation conditions, and gettering steps--on the above two phenomena are described. In addition, the effect of temperature on the rate of surface-state production is reported. High energy electron irradiations have been performed and the results compared to previous data taken with low energy electrons and X-rays. It is concluded that a given dose of any ionizing radiation has the same effect on the oxide space charge. Device studies have been extended to include junction field-effect transistors and it is concluded that these devices are less sensitive to ionizing radiation than either MOS or bipolar devices. Experiments with nuclear reactor irradiation show that in a reactor environment bulk damage due to fast neutrons dominates in the degradation of bipolar transistors, junction field-effect transistors, and p-n junction diodes, whereas, surface effects due to ionizing radiation present in the reactor are most important in the case of MOS transistors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0656678
Entities
People
- A. S. Grove
- D. J. Fitzgerald
- E. H. Snow