JUNCTION FIELD-EFFECT TRANSISTOR CHARACTERISTICS RELEVANT TO ANALOG SWITCH CIRCUITS.

Abstract

The junction Field-Effect Transistor (FET) is evaluated for use in analog switch circuits. FET characteristics, such as channel resistance, drain cutoff current, pinch-off voltage and device capacitance, are analyzed for sensitivity to changes in temperature and voltage. Equivalent circuits are provided for an FET used as an analog switch. Separate equivalent circuits are used for transient analysis and steady-state analysis. A series analog switch is analyzed for turn-off transients that occur for various rise-time gate control signals. An effective voltage Ve is introduced to facilitate a two-part transient analysis for an initial and final turn-off transient. Turn-on transients are analyzed qualitatively. A steady-state analysis shows the effect of temperature on the error voltage at the analog switch output. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0656889

Entities

People

  • Edgar H. Fischer

Organizations

  • Johns Hopkins University Applied Physics Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Equivalent Circuits
  • Field Effect Transistors
  • Resistance
  • Sensitivity
  • Steady State
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology