INTERACTION BETWEEN FREE ELECTRONS AND INTENSIVE LIGHT BEAM - MULTIPHOTON PROCESSES OF THE CARRIERS IN SEMICONDUCTORS,
Abstract
The paper discusses the interaction between carriers in semiconductors and a laser beam. The influence of intensive light on the intraband motion of electrons is treated. The conclusion is that the states of the electrons within one band can still be characterized by a set of quantum numbers -- the quasi-momentum p and that the wave function contains a factor describing the forced motion in the extremely strong electromagnetic field. The interband transition and other intraband scattering are then treated as perturbations. During the transition process, the forced motion changed with the absorption or emission of a number of photons. The absorption constants for multi-photon processes of free carriers absorption and the direct transition from valence band to conduction band are calculated. It was estimated that in some materials the two-photon process of the type discussed can be easily observed-especially the direct absorption of two photons in Ge. It was pointed out that using the laser light the absorption lines of the exciton may be shifted to the infrared region, so that the resolving power may be improved. The case of CdSe was discussed as an example.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 25, 1967
- Accession Number
- AD0657017
Entities
People
- Ho Yu-ping
Organizations
- National Air and Space Intelligence Center