RADIATION DAMAGE IN SEMICONDUCTORS.

Abstract

Work is reported in the following areas: (1) Photon irradiation enhanced diffusion in germanium at temperatures above 600 degrees C; (2) Photoconductivity of electron-irradiated silicon at 20 degrees K; (3) Low temperature annealing of N-type germanium; (4) Fast annealing of pulse-irradiated germanium (preliminary work in progress).

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1966
Accession Number
AD0657365

Entities

People

  • A. Brelot
  • J. Bourgoin
  • J. Zizine
  • K. Matsui
  • P. Baruch

Organizations

  • École Normale Supérieure

Tags

DTIC Thesaurus Topics

  • Annealing
  • Compound Semiconductors
  • Corpuscular Radiation
  • Diffusion
  • Electromagnetic Radiation
  • Electronics
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • Germanium
  • Ionizing Radiation
  • Low Temperature
  • Nuclear Radiation
  • Photoconductivity
  • Radiation
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics