THE GAAS-INSB GRADED-GAP HETEROJUNCTION

Abstract

The interface-alloy technique has been used to produce heterojunctions between GaAs and InSb. X-ray and Kossel line patterns show that, despite the relatively large 14% lattice mismatch between the semiconductors, these heterojunctions are single-crystal. Photocurrent and current-voltage measurements are explained by a model for the heterojunction band structure in which the salient feature is a region of the order of 60 A long which has a linearly-graded energy gap joining the GaAs to the InSb. The photocurrent occurs via hot carriers generated in the graded-gap region which traverse this region (with a mean free path of approximately 20 A) to the heterojunction barrier maximum. The results of the capacitance-voltage measurements are consistent with the current-voltage and photocurrent measurements evaluated in terms of the graded-gap heterojunction model.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1967
Accession Number
AD0657777

Entities

People

  • Everett D. Hinkley
  • Robert H. Rediker

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Charge Carriers
  • Compound Semiconductors
  • Conduction Bands
  • Current Density
  • Electric Fields
  • Electron Beams
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Mean Free Path
  • Metals
  • Quantum Efficiency
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics