MAGNETORESISTANCE AND HALL EFFECT IN P-TYPE GERMANIUM.

Abstract

The transverse magnetoresistance and Hall effect between 16 and 70 K were measured in p-type germanium in fields up to 165 kgauss. The zero-field resistance at 77 K was approximately 2.4 ohm-cm. Samples oriented with H in the (111) direction, I random; H in the (001) direction, I in the (110) direction; H in the (110) direction, I in the (001) direction; and H in the (110) direction, and I in the (110) direction were investigated. The magnetoresistance was found to be approximately linear in H with little dependence on orientation. The Hall coefficient was independent of H above 30 K but increased with H at lower temperatures due to 'magnetic freeze-out' of carriers. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1967
Accession Number
AD0657851

Entities

People

  • Jean W. Gallagher
  • William F. Love

Organizations

  • University of Colorado Boulder

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Electrical Resistance
  • Germanium
  • Hall Effect
  • Magnetoresistance
  • Orientation (Direction)
  • Resistance
  • Transverse

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology