GROWTH OF SINGLE TI2O3 CRYSTALS FROM THE MELT

Abstract

Procedures are described for growth of large single crystals of TiOx, (1.501 < or = x < or = 1.512) that are reasonably free of cationic impurities and of C and N. Data concerning the stoichiometry and the segregation of impurities during crystal growth are presented. The electrical properties of doped and pure single crystal materials are briefly described.

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Document Details

Document Type
Technical Report
Publication Date
Aug 11, 1967
Accession Number
AD0657978

Entities

People

  • Jurgen M. Honig
  • Robert E. Fahey
  • Thomas B. Reed

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Boundaries
  • Crucibles
  • Crystal Growth
  • Crystals
  • Electrical Measurement
  • Electrical Properties
  • Elements
  • High Temperature
  • Impurities
  • Magnetic Fields
  • Massachusetts
  • Materials
  • Single Crystals
  • Titanium
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.