HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2K AND 77K

Abstract

A band structure model is proposed which is consistent with magneto- Hall and magneto-resistance data obtained for various samples of HgTe at 4.2K. Using an optimization routine it was ascertained that the data could be fitted on the basis of a three-carrier model involving two sets of electrons and one set of holes. Under special crystal growth conditions the electron Hall mobility at 4.2K of HgTe exceeded 640,000 sq cm/v-sec.

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Document Details

Document Type
Technical Report
Publication Date
Aug 25, 1967
Accession Number
AD0658089

Entities

People

  • Jurgen M. Honig
  • Philip H. Trent
  • Theodore C. Harman

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Boltzmann Equation
  • Center Of Gravity
  • Charge Carriers
  • Computer Programs
  • Computers
  • Conduction Bands
  • Crystals
  • Electrical Measurement
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Magnetic Fields
  • Materials
  • Measurement
  • Mobility

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics