INVESTIGATION AND DEVELOPMENT OF SEMICONDUCTOR-METAL CATHODES.
Abstract
A major phase in the development and characterization of rectifying metal-semiconductor contacts for application to cathodic emission was completed. A number of contacts meet the requirements of Schottky barrier heights equal to or greater than 1.5 eV and V-I slope constants (q/kT dV/d ln I near unity. Results are presented for contacts on B6P, ZnO, ZnS, GaAs1-xPx, GaP and ZnSe. Most effort was concentrated on Cu, Ag and Au contacts to GaP and ZnSe. Contacts with both etch-polished and vacuum-cleaved interfaces were studied, and (for GaP) both the influence of surface crystalline orientation and the temperature dependence of the contact properties determined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0660577
Entities
People
- Robert J. Archer
- Thomas O. Yep