HETEROCRYSTAL INTEGRATED CIRCUIT TECHNIQUES.

Abstract

The report contains a summary of experimental work related to the following topics: (1) Use of aluminum oxide, silicon oxide, and silicon nitride as possible masking materials for selectively etching GaAs and Ge deposition in GaAs; (2) Isolation properties of GaAs sub SI as received from crystal processing and after oxide and germanium growth; (3) Device characteristics of junctions formed in germanium regions selectively grown in germanium and in gallium arsenide substrates. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1967
Accession Number
AD0661042

Entities

People

  • C. Dennis
  • E. Clayton Teague
  • L. Sharif
  • Stacy B. Watelski

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Ceramic Materials
  • Circuits
  • Gallium Arsenides
  • Germanium
  • Integrated Circuits
  • Materials
  • Microwave Integrated Circuits
  • Oxides

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics