MEASUREMENT OF F SUB T FOR ANALYZING THE LARGE-SIGNAL RF BEHAVIOR OF POWER TRANSISTORS.
Abstract
A technique for measuring the f sub T of radio frequency (RF) power transistors over a broad range of operational current and dissipation levels is described. The method employs a pulsed biasing technique to avert thermal damage to the device. Such high current f sub T measurements provide a more meaningful description of the RF performance capability of a power transistor than the low current level f sub T values conventionally measured and quoted on transistor specifications. The potential of the approach is illustrated by a family of constant f sub T contours developed over the full operating voltage-current range of a modern 50 watt - 80 MHz power transistor. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0661051
Entities
People
- Octavius Pitzalis Jr.
Organizations
- United States Army Communications-Electronics Command