THE PIEZORESISTANCE EFFECT IN P-TYPE PBTE,

Abstract

The piezoresistance effect was measured in 21 single crystal samples of p-type PbTe. The piezoresistance coefficients pi sub 11, pi sub 12 and pi sub 44 were obtained by application of hydrostatic pressure, and uniaxial stresses in different crystallographic orientations. The temperature dependence of these coefficients was investigated in the range 300 K to 77 K for hole concentrations between 4.04 x 10 to the 17th power and 4.94 x 10 to the 19th power cu cm. The results of these measurements are discussed in terms of the band structure and transport properties of the material. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 09, 1967
Accession Number
AD0661223

Entities

People

  • James Richard Burke Jr

Organizations

  • Naval Ordnance Laboratory

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Coefficients
  • Crystals
  • Energy Bands
  • Hydrostatic Pressure
  • Materials
  • Measurement
  • Orientation (Direction)
  • Physical Properties
  • Pressure Measurement
  • Single Crystals
  • Solid State Properties
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology