SILICON DIODE FAST NEUTRON DOSIMETER. PHASE II. ISOCHRONAL AND ISOTHERMAL ANNEALS OF THE RADIATION DAMAGE,
Abstract
A discussion of the theory of annealing based on diffusion-limited processes is presented, along with the development of the characteristic equations for both monomolecular and bimolecular processes. A development of the theoretical dependence of the annealing characteristics on the chemical impurity concentration is also presented. Isochronal and isothermal anneals of the lifetime and forward voltage of p-i-n diodes, degraded by fast neutron bombardment, were performed over the temperature range from 23C to 200C. The diodes were made from both n- and p-type, pulled and float zone material. Resistivities ranged from 50 to 1000 ohm-cm. The isochronal and isothermal results indicated that there are three dominant defects: one which anneals at room temperature; one which anneals in the 50C to 120C temperature range; and another which starts to anneal above 120C. All defects anneal with second-order kinetics. None of the defects seems to be associated with chemical impurities originally present in the material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1967
- Accession Number
- AD0661323
Entities
People
- J. M. Swartz
- M. O. Thurston
- W. H. Closser