CONDUCTIVITY OF INTRINSIC INSB IN HIGH ELECTRIC FIELDS,

Abstract

A theory is developed for the carrier transport properties and impact ionization rate in an intrinsic polar semiconductor with high carrier density. Polar scattering prevails in weak fields but it is shown that intercarrier interactions become important at higher field strengths. The carrier concentration is found to vary approximately exponentially with applied field. Numerical results for data representative of InSb are presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 06, 1967
Accession Number
AD0661576

Entities

People

  • K. Blotekjaer
  • P. Weissglas

Organizations

  • Royal Institute of Technology

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conductivity
  • Electric Fields
  • Electronics
  • Ionization
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics