INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS,

Abstract

A program was initiated to derive radiation hardened insulated gate field effect devices. Initial devices fabricated in silicon three microns thick was completed. The first lots obtained were P enhancement and N depletion devices. The device structures are shown with electrical characteristics. A theoretical derivation of transient currents in these VTT (Very Thin Technique) devices is shown and compared with conventional MOS and dielectrically isolated bipolar transistors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1967
Accession Number
AD0662127

Entities

People

  • D. A. Mcwilliams
  • N. J. Grannis

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Radiation
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Regression Analysis.

Technology Areas

  • Microelectronics