RADIATION EFFECTS ON THIN-FILM INTEGRATED CIRCUIT ELEMENTS.

Abstract

Efforts were directed toward (1) an experimental determination of the differences in the charge change induced by 600 kV FXR and 2 MV FXR irradiations, 18 MeV LINAC electron, and bremsstrahlung from 18 MeV electrons; (2) the dependence of the radiation induced charge change on substrate thickness for thicknesses near the range of the most energetic Compton electrons, and (3) the effectiveness of a guard ring in limiting the charge change which is neutralized by a circular disc conductor. The experiments performed in each of the above areas are described and the resulting data presented. The presented data shows that (1) charge change is a decreasing function of incident radiation energy, (2) induced charge change decreased with decreasing substrate thickness within the thickness range of 0.0005 inch < or = x < or = 0.004 inch, and (3) a guard ring surrounding a circular disc conductor pattern, when biased independently but at the same potential as the circular disc portions, confines the region of charge imaged by the disc to that region immediately behind the disc. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1967
Accession Number
AD0662702

Entities

People

  • A. F. Krueger
  • V. H. Strahan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bremsstrahlung
  • Electrons
  • Guard Rings
  • Integrated Circuits
  • Radiation
  • Radiation Effects
  • Rings
  • Substrates
  • Thickness
  • Thin Films

Fields of Study

  • Physics

Readers

  • Microwave Engineering.
  • Nuclear and Radiation Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics