THE EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON THE GEOMETRY OF A FUSED P-N JUNCTION IN GALLIUM ARSENIDE,

Abstract

The effect of crystallographic orientation on the shape of fused p-n transition boundaries was studied in p-type gallium arsenide. The results showed that for melting on surfaces with (110) and (100) orientations the p-n-interface did not have a regular geometrical shape even for very small drops. Reference was made to the work of Ellis (J. Appl. Phys., 1959, v. 30, no. 6, p. 946) where gallium arsenide was grown on vertical (110) surfaces of seed crystals.

Document Details

Document Type
Technical Report
Publication Date
Aug 03, 1967
Accession Number
AD0662839

Entities

People

  • O. I. Pavlova
  • R. L. Petrusevich

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Boundaries
  • Elements
  • Gallium
  • Gallium Arsenides
  • Geometry
  • Group 13 Elements
  • Metals
  • Orientation (Direction)
  • P-N Junctions
  • Post-Transition Metals
  • Transitions

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics