ELECTRONIC CONFIGURATION OF INDIUM ANTIMONIDE SURFACES.

Abstract

Large signal alternating current field effect experiments on surfaces of n and p-type InSb yielded results which were found to be consistent with a model according to which the discrete 'fast' states near the valence and conduction band edges are acceptor-like, characteristic of the antimony and indium species, respectively. This model was extended to emphasize the importance of sub-surface states. The electrical properties of these surfaces was correlated with their chemical and structural characteristics and was found to be consistent with the Gatos-Lavine model of the dangling bonds on the III-V compound surfaces.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1967
Accession Number
AD0663092

Entities

People

  • Harry C. Gatos
  • Howard R. Huff
  • Shinji Kawaji

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Alternating Current
  • Antimonides
  • Antimony
  • Antimony Compounds
  • Conduction Bands
  • Electrical Properties
  • Elements
  • Energy Bands
  • Indium
  • Indium Antimonides

Readers

  • Coastal Oceanography
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics