OBSERVATION OF QUANTUM GALVANOMAGNETIC PHENOMENA IN N-TYPE INDIUM ANTIMONIDE.

Abstract

Quantization effects in the bulk galvanomagnetic properties of n-type InSb were studied in conjunction with the transport properties of compound semiconductor surfaces. The transverse and longitudinal magnetoresistivity were measured at 4.2, 50 and 77K. The former was found to increase with increasing magnetic field at all temperatures and (for a given temperature) was an order of magnitude larger than the latter which became saturated at the two higher temperatures. At 4.2K, the electrons were weakly degenerate and the bulk mobility was determined by screened ionized impurity scattering. At 77K, the electrons were non-degenerate and the predominant scattering mechanism was probably low temperature optical phonon scattering. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1967
Accession Number
AD0663093

Entities

People

  • Harry C. Gatos
  • Howard R. Huff
  • Shinji Kawaji

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Electrons
  • Indium Antimonides
  • Low Temperature
  • Magnetic Fields
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing