CERTAIN ELECTRICAL PROPERTIES OF THIN FILMS OF THE GATE SYSTEM,
Abstract
A study was made of the electrical conductivity and thermoelectric power of thin, vapor-deposited films of GaTe and Ga2Te3. Thin films of the Ga-Te system were obtained by the evaporation of massive polycrystalline and monocrystalline specimens of GaTe and Ga2Te3 in a vacuum of the order of 0.00001 mm. Hg, and also by the Vekshinsky method. The substrates were glass and mica, at controlled temperatures. The physical properties of the films were found to depend upon many factors, such as the velocity of sublimation, temperature of the substrate, etc. However, the substrate material did not significantly affect the film electrical properties. To exclude anomalies related to excessively thin films, films at least .2 micron thick were used. Measurements of electrical conductivity and differential thermoelectric power were made under vacuum. Curves of temperature dependence of the electrical conductivity of thin films of GaTe and Ga2Te3 are given for a temperature range of -183C to +300C, obtained both in vacuum and in air. The forbidden zone width of Ga2Te3, determined from the slope of the logarithm of the conductivity curve plotted vs. the inverse temperature, was 1.56 electron volts, in agreement with known optically determined data. The differential thermoelectric power (relative to copper) of thin films showed little temperature dependence; it was of the order of 450 microvolts/degree C. for GaTe, and 500 microvolts/degree C. for Ga2Te3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 03, 1967
- Accession Number
- AD0663348
Entities
People
- V. I. Gramatskii
- V. P. Mushinskii
Organizations
- National Air and Space Intelligence Center