SEMICONDUCTOR JUNCTION PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS,
Abstract
Complex x-ray diffraction phenomena associated with diffused semiconductor junctions are successfully correlated with the performance of the semiconductor junction. The technique of x-ray stress topography is established that permits a rapid nondestructive analysis of the stress environment of film/crystal interfaces. Based on dynamical diffraction phenomena that occur at such interfaces, the technique is useful principally to measure the sign of the stress in film and/or substrate and to detect stress buildups and stress reversals connected with processing procedures -- in particular with those of the planar semiconductor device technology. Also, phosphorus diffusion into silicon is explored near and above the solubility limit through radiochemical profiling and compared with crystal damage by x-ray diffraction microscopy and Sirtl etch techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0663723
Entities
People
- Guenter H. Schwuttke
Organizations
- International Business Machines Corporation (Armonk, NY)