ION IMPLANTED MOS DEVICE.

Abstract

The final report is made on the fabrication of MOS transistors by ion implantation. Two different n-channel depletion mode MOS transistors were fabricated. These transistors are to be used to compare surface states of the ion implanted units with surface states of conventional diffused devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1967
Accession Number
AD0663737

Entities

People

  • Carl Guild
  • Frank A. Leith
  • William J. King

Tags

DTIC Thesaurus Topics

  • Charged Particles
  • Fabrication
  • Implantation
  • Ion Implantation
  • Ions
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.