EXCESS NOISE IN SEMICONDUCTORS.
Abstract
An experiment to detect optical absorption fluctuation in germanium caused by variations in free carrier scattering associated with 1/f-type carrier fluctuations has been undertaken. The sensitivity limit of the experiment, internal noise in the infrared detectors, is reduced by including the sample in an optical interferometer and placing the detector in a dark fringe. Further reduction below the detector dark noise level is obtained by using two detectors and cross-correlating the individual output signals. The desired signal has not yet been observed because of the poor detectivity of lead sulfide detectors at the 3.39 micron laser wavelength used to probe the sample. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1967
- Accession Number
- AD0664513
Entities
People
- James J. Brophy
Organizations
- IIT Research Institute