DESIGN AND DEVELOPMENT OF RADIATION HARDENED FIELD-EFFECT TRANSISTORS.
Abstract
The effects of fast neutron radiation on field-effect transistors was studied, and a theory consistant with actual data was developed. In particular, junction FETs with high pinchoff voltage and with heavier channel-carrier concentration are more radiation resistant. For MOS FETs, low substrate carrier concentration provides better radiation resistance. Three radiation-resistant devices were developed: an n-channel junction FET, a p-channel junction FET, and an n-channel depletion MOS FET. The junction FETs showed less parameter degradation than the MOS after 10 to the 15th power nvt; however the MOS was still functional after extremely high radiation --- 3 x 10 to the 16th power nvt. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1967
- Accession Number
- AD0664794
Entities
People
- Frederick Ziber