FIELD ENHANCED IONIZATION OF TRAPS.
Abstract
Stationary steplike high-field domains in the range of negative differential conductivity provide the possibility to determine experimentally the carrier density as a function of the electric field. Measurements done with CdS show that the electron density decreases by about 2 orders of magnitude with increasing field between 30 and 70 kV/cm. It can be shown that this is caused by field quenching, i.e., field excitation of minority carriers from hole traps and thereby enhanced recombination. This field excitation of holes, however, cannot be described quantitatively by any classical field excitation mechanism, i.e., by impact ionization or by tunnel effect. These mechanisms would need a considerably higher field than observed for causing the measured effect. Agreement between experiment and theory can be reached by field enhanced ionization of Coulomb-attractive centers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1968
- Accession Number
- AD0665025
Entities
People
- Karl Wolfgang Boer
Organizations
- University of Delaware