MIXED ELECTRON SCATTERING IN INSB,

Abstract

Numerical calculations of the field dependence of the electron mobility in InSb are presented. The effects of optical polar scattering and deformation potential scattering (acoustic and optical) are summed. The drifted Maxwellian approach is used. The high field dependence of the electron mobility is strongly dependent on the deformation potential. For a deformation potential of 7.2 eV dielectric breakdown is obtained, while for a value of 30 eV a voltage controlled negative differential mobility occurs. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 17, 1967
Accession Number
AD0665153

Entities

People

  • C. Hammar

Organizations

  • Royal Institute of Technology

Tags

DTIC Thesaurus Topics

  • Charged Particles
  • Electromagnetic Scattering
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • Leptons
  • Mobility
  • Potential Scattering
  • Scattering
  • Subatomic Particles

Fields of Study

  • Materials science
  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics