RELAXATION PHENOMENA ON INDIUM ANTIMONIDE SURFACES AT HIGH ELECTRIC FIELDS.
Abstract
High voltage pulsed field effect experiments were performed on two surfaces of n-type InSb which were previously exposed to a mixture of chlorine and air. The observed relaxation phenomena were attributed to an emission of electrons from a 'slow' surface state into the conduction band. These phenomena were adequately described by a quantum mechanical tunnel equation. A 'slow' surface state was located approximately 0.04 eV below the conduction band edge on both surfaces. High voltage alternating current field effect experiments were concurrently performed on the same surfaces. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1968
- Accession Number
- AD0665310
Entities
People
- Harry C. Gatos
- Howard R. Huff
- Shinji Kawaji
Organizations
- Massachusetts Institute of Technology