PROPERTIES OF ION-IMPLANTED BORON, NITROGEN, AND PHOSPHORUS IN SINGLE-CRYSTAL SILICON.
Abstract
The technique of ion implantation provides a method of introducing impurities into semiconductors for the purpose of selectively doping the material to form device structures. The purpose of the research reported here was to investigate the usefulness of this technique for implanting the elements boron, phosphorus, and nitrogen into the semiconductor silicon. The material produced by this method was analyzed in relation to both its physical properties and to the electrical characteristics of the device structures obtained. Planar and mesa diodes were fabricated which had low leakage and sharp reverse breakdown characteristics. Also by ion implantation methods, useful planar transistors were made which exhibited common-emitter current gains up to 30. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0665965
Entities
People
- Walter J. Kleinfelder
Organizations
- Stanford University