NONLINEAR OPTICAL SUSCEPTIBILITIES IN GROUP IV AND III-V SEMICONDUCTORS.

Abstract

The contribution of the valence electrons to the nonlinear optical susceptibilities may be estimated on the basis of simple telrahedral bonding orbitals. The coefficient for second harmonic generation in III-V compounds is in satisfactory agreement with the theoretical estimate. The same model contributes to the third-order nonlinearity, which describes scattering processes between four light waves. Again reasonable agreement is obtained with data for combination frequency generation in Si and Ge. The much larger effects in n-type InAs and InSb are due to conduction electrons. Their contribution has been calculated exactly if Kane's theory for the band structure is used. The contribution of the valence electrons is, however, not negligible and is equal to the contribution of 10 to the 16th power electrons/cc in InSb. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1968
Accession Number
AD0665983

Entities

People

  • Nicolaas Bloembergen
  • Sudhanshu S. Jha

Organizations

  • Harvard University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Agreements
  • Band Structures
  • Coefficients
  • Compound Semiconductors
  • Demographic Cohorts
  • Electronics
  • Electrons
  • Energy Bands
  • Frequency
  • Physical Properties
  • Scattering
  • Second Harmonic Generation
  • Semiconductors
  • Solid State Electronics
  • Solid State Properties

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Space