POINT DIODES FROM GALLIUM ARSENIDES,
Abstract
The article gives a brief survey of previous literature on the general and rectifying properties of a gallium arsenide-metal point contact. Data are given on the processes of electrical forming applicable to manufacture of rectifiers and tunnel diodes. Results are given for quantitative calculations of electrical forming of a gallium arsenide-metal point contact. The calculations are made for two cases: (1) for the case of spherical symmetry assuming that the point contact has no size, i.e., the contact is represented as a mathematical point; (2) for the case of ellipsoidal symmetry, taking the actual dimensions of the contact between metal and semiconductor into account.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 11, 1967
- Accession Number
- AD0666150
Entities
People
- A. A. Vilisov
- A. P. Vyatkin
Organizations
- National Air and Space Intelligence Center