RADIATION EFFECTS IN SILICON AND GERMANIUM.
Abstract
The following have been studied and reported: (a) The influence of aluminum on carrier degradation in neutron-irradiated silicon. (b) Dependence of carrier lifetime on excess density for neutron-irradiated silicon. (c) Influence of impurities on carrier removal and annealing in neutron-irradiated silicon in the resistivity range from 0.5 to 50 ohm-cm. (d) Recombination level position from the dependence of lifetime on excess density in n-type germanium following irradiation. (e) Short-term annealing in bulk silicon following pulsed neutron irradiation. (f) Carrier recombination at disordered regions in neutron-irradiated semiconductors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1967
- Accession Number
- AD0666220
Entities
People
- C. A. Germano
- O. L. Curtis Jr.
- R. F. Bass