NEW SOLID-STATE DEVICE CONCEPTS.
Abstract
The report summarizes the ZnSexTe(1-x) light-emitting diode work carried out under the present contract. It includes recent investigations of the thermodynamics of ZnSexTe(1-x) crystal growth which are concerned with the effects of varying the partial pressure of the chalcogen and the donor or acceptor doping. The report also reviews the status of the thin-film GaAs storage diode. The experimental procedures and results are described in some detail. Reproducibility and compatibility with integrated circuitry are satisfactory and make this device attractive for use in memory arrays. Preliminary results on radiation tolerance are also given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1968
- Accession Number
- AD0666445
Entities
People
- John R. Richardson
- Manuel Aven
- Robert N. Hall
- Walter Garwacki
Organizations
- General Electric