COMPLEMENTARY INSULATED GATE FIELD EFFECT TRANSISTOR CIRCUITS.
Abstract
New circuits of higher order complementarity were investigated. Ten of these circuits exhibited unusual static volt-ampere characteristics. At least two applications were found for each circuit. Ten linear and digital applications were found for one circuit; it also exhibited an extensive negative resistance region. A discussion of various types (orders) of complementarity is presented and a list of properties for determining the order of complementarity is proposed. The study demonstrated the existence of a correlation between complementarity and versatility. However, additional research is needed to explore further the exact nature of this correlation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1967
- Accession Number
- AD0666645
Entities
People
- Jon Christian Zimmerman
Organizations
- Air Force Institute of Technology