HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Abstract
The TCR-vs.-ohms/sq. curve for hafnium thin-film resistors prepared on glass substrates is plotted and compared to that of samples prepared on glazed ceramic substrates. A technique for forming fine-line (0.5 mil) resistor patterns of hafnium has been developed. MOM capacitors and chip-size resistors using hafnium technology and related anodization processing were fabricated on passivated silicon wafers. Details of the work on hafnium-dioxide insulated MOS devices are presented. In addition, evaluation of the hafnium-dioxide films using C-V measurements is reported. A multivibrator circuit has been chosen as an experimental vehicle. The layout and masks for this circuit are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1968
- Accession Number
- AD0666776
Entities
People
- Joseph H. Mitchell
- Morton L. Topfer
- Robert L. Schelhorn