ELECTRONIC DRIFT MOBILITIES AND SPACE-CHARGE LIMITED CURRENTS IN LITHIUM-DOPED ZINC OXIDE.

Abstract

Electron drift mobilities and lifetimes were measured from 250 to 400K in oriented single crystals of high-resistivity, Li-doped ZnO by determining the transit time across a plane-parallel specimen for electrons which had been photoinjected at one surface by light pulses of about 10 nsec duration. Drift mobilities at 300K ranged from 2 - 8 sq cm/V/sec for the specimens investigated with no orientational dependence being apparent. The observed exponential temperature dependence of the mobility indicated that the electron drift mobility is primarily controlled by thermal release from trapping states, of estimated density 10 to the 16th power/cu cm, lying in a 0.29-eV region below the conduction band. Electron lifetimes, estimated from low-field data, showed some orientation dependence and ranged from 30 - 100 microsec at room temperature, while electron ranges were 0.0001 to 0.001/sq cm/V and were temperature independent. Ohmic electrodes of indium were used to inject electrons into plane-parallel monocrystals of Li-doped ZnO, producing space-charge-limited currents at high fields. The observed current-voltage and current-temperature relations indicated that discrete or narrow bands of electron traps existed in the 0.4-eV and in the 0.72 to 0.80-eV regions below the conduction band edge with densities of 0.004 and 10 to the 17th power/cu cm, respectively. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1968
Accession Number
AD0667469

Entities

People

  • D. H. Whitmore
  • M. A. Seitz

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Conduction Bands
  • Crystals
  • Electrodes
  • Electrons
  • Energy Bands
  • Light Pulses
  • Mobility
  • Orientation (Direction)
  • Single Crystals
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster