PYROLYTIC DECOMPOSITION STUDIES OF TETRAETHOXYSILANE FOR OBTAINING HIGH-GRADE SIO2 FILMS.
Abstract
Silicon oxide can be produced by decomposition of alkoxy silane compounds, and, under certain conditions, thin films of silicon oxide can be deposited over metal substrates. Tetraethoxysilane was chosen for study because of its high oxygen content, making possible clear, thick films (1-3) and the low temperature needed for decomposition. An investigation was made of several means of decomposition. One of these - bulk liquid and liquid solutions - proved unsuitable for producing the desired films. Liquid phase reactions tend to produce polymers or amorphous solids and include incompletely reacted material with the deposit. Gas phase decompositions, on the other hand, produce hard, insulating films. A flowing system similar to that used by the electronics industry was evaluated and compared with a new closed tube system, which has been designed and fabricated to help overcome difficulties encountered with the flowing system. With the closed tube, films can be conveniently deposited on varied substrates, thus providing unique environments for the study of their chemical and electrical properties. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0667897
Entities
People
- George W. Heunisch
Organizations
- United States Army Communications-Electronics Command