THE THEORY OF MOBILITY, HALL EFFECT AND MAGNETORESISTANCE IN SEMICONDUCTORS WITH NON-UNIFORM CONCENTRATION OF CHARGED IONS.

Abstract

The theory of kinetic phenomena in semiconductors with charged ions is generalized to the case of non-uniform ion concentration. The free-path length of current carriers with respect to thermal vibrations and other scattering mechanisms, excluding charged-ion scattering, is assumed to be much smaller than the Debye screening radius in a semiconductor. The non-uniform charged ion concentration in the general case makes an anisotropic contribution to tensors describing kinetic phenomena in semiconductors. This effect may be considerably greater in value than the effect obtained for the case of non-uniform charged-ion concentration in semiconductors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 30, 1968
Accession Number
AD0668014

Entities

People

  • Yu. V. Kornyushin

Organizations

  • Johns Hopkins University Applied Physics Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Hall Effect
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Magnetoresistance
  • Mobility
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Vibration

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics