THEORY OF NONLINEAR OPTICAL PHENOMENA IN EXTRINSIC SEMICONDUCTORS,
Abstract
The two-photon absorption and the second-harmonic generation in extrinsic n- and p-type semiconductors are theoretically considered. States of electrons are described within the framework of the band theory of solid body; the interaction between radiation and solid-body electrons is examined (R. Braunstein, Phys. Rev., 1961, 125, 475; R. Loudon, Proc. Phys. Soc., 1962, 80, 952). It is found that the absorption factor of w1 photons is proportional to the intensity of the second beam of w2 -frequency photons. Maximum 2-photon absorption is possible when one of the frequencies is low and the other is close to the frequency that corresponds to the fringe of self-absorption; the effect of 2-photon absorption is stronger in those crystals in which the virtual band lies close to the conduction band. The effect of impurities on the 2-photon absorption (donor and acceptor centers, high and low temperatures, concentration of impurities) is investigated. Generation of the second harmonic is first considered in intrinsic semiconductors (here, the band-structure effect is explored) and then the effect of impurities is evaluated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 18, 1967
- Accession Number
- AD0668049
Entities
People
- V. I. Ponomarenko
Organizations
- National Air and Space Intelligence Center