ETCHING BEHAVIOR OF IN2O3 GROWN FROM PBO-B2O3,
Abstract
Single crystals of In2O3 grown from a PbO-B2O3 solution are etched by HNO3 or HNO3-HCl solutions. Characteristic etch pits and etch tubes are described. The number of etch pits is found to be related to the growth history of the crystals. The relationship of the etch tubes to crystal growth is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1968
- Accession Number
- AD0668449
Entities
People
- Armond B. Chase
- James R. Teviotdale
Organizations
- The Aerospace Corporation