FAST RECOVERY OF ELECTRON IRRADIATED GERMANIUM,
Abstract
The fast recovery of electron concentration after a burst of 1 MeV electrons (1 mA during 15 microsec) has been studied near 100 degrees K, in high purity n-type Germanium (10 to the 13th power to 3 x 10 to the 13th power Sb/cc). Three different stages have been observed. (1) A fast decrease (10 microsec) of excess carrier concentration. (2) A further decrease below the initial concentration, during 6 ms. This stage can be attributed to fillind of traps either created by irradiation, or grown in the crystal. (3) A return towards the initial concentration, through defect annealing. The time constant, at 100 degrees K, is 24 ms, and the activation energy, near 100 degrees K, is 0.14 eV. This stage appears negligible below 60 degrees K, as expected if it corresponds to the '65 degrees K defect.' This behavior can be interpreted with a model based on the creation of a transient defect, stabilized by electronic capture, and then decaying by the usual annealing process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1968
- Accession Number
- AD0668468
Entities
People
- J. Bourgoin
- P. Baruch
Organizations
- École Normale Supérieure