LOW TEMPERATURE IRRADIATION AND ANNEALING OF N-TYPE GERMANIUM; EFFECTS OF OPTICAL BLEACHING,

Abstract

The isothermal recovery of n-type germanium after irradiation by electrons at 20 degrees K is studied by electrical conductivity measurements around 65 degrees K. This study shows that the reaction involved in this temperature range is a diffusion controlled recombination of strongly correlated pairs, thus indicating close vacancy-interstitial pairs. The isochronal recovery of n-type germanium after irradiation by electrons at 20 degrees K is studied by Hall effect and resistivity measurements. Results are discussed.

Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1968
Accession Number
AD0668469

Entities

People

  • J. Zizine

Organizations

  • École Normale Supérieure

Tags

DTIC Thesaurus Topics

  • Conductivity
  • Electrical Conductivity
  • Electrons
  • Germanium
  • Hall Effect
  • Low Temperature
  • Measurement
  • New York
  • Radiation
  • Radiation Effects
  • Recovery
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Organic Chemistry
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene