ELEMENT DEVELOPMENT FOR ADVANCED ASSOCIATIVE MEMORIES.
Abstract
The objective of this research was to demonstrate that capacitor elements comprising the mixed bismuth oxide type ferrielectrics as a dielectric represent an important improvement as compared to ordinary ferroelectric capacitors and they can be utilized as logic and memory devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0668473
Entities
People
- Antonio De La Paz
- Charles F. Pulvari
- Melvin J. Walsh Jr.
- Noemi Szabo
- William B. Penzes
Organizations
- The Catholic University of America