RELATIONSHIP BETWEEN HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.

Abstract

By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1968
Accession Number
AD0668902

Entities

People

  • Bernard Reich
  • Edward B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Sensors

DTIC Thesaurus Topics

  • Hot Spots
  • Radiometers
  • Resistance
  • Thermal Resistance
  • Transistors

Fields of Study

  • Physics

Readers

  • Atmospheric Remote Sensing.
  • Semiconductor Device Technology