EFFECT OF COLLECTOR DESIGN ON HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.

Abstract

Hot-spot formation was studied as a function of collector resistivity and thickness variations for a similar group of epitaxial and triple-diffused silicon planar transistors. An infrared radiometer was used for locating and measuring hot-spot temperatures. Hot-spot thermal resistance is used in the analysis of both forward and reverse bias second breakdown performance. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1968
Accession Number
AD0668903

Entities

People

  • Bernard Reich
  • Edward B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Hot Spots
  • Physical Properties
  • Radiometers
  • Resistance
  • Thermal Resistance
  • Thickness
  • Transistors

Readers

  • Atmospheric Remote Sensing.
  • Electronics Engineering
  • Thin Film Deposition Science.