THE ELECTRICAL AND METALLURGICAL PROPERTIES OF DEFECTS IN COMPOUND SEMICONDUCTORS.

Abstract

The report summarizes a program directed toward the following seven separate projects related to the electrical and metallurgical properties of defects in compound semiconductors: (1) Diffusion, solubility, and distribution coefficient of zinc in gallium arsenide and gallium phosphide; (2) Analytical study of zinc diffusion in gallium arsenide and the electrical properties of the resulting diffused layers; (3) Electron microprobe study of lattice point defects in semiconductor single crystals; (4) A point contact method for determining the charge carrier density and mobility in thin semiconducting layers; (5) Some effects of gamma radiation on silicon and silicon devices; (6) Green electroluminescence at P-N junctions in gallium phosphide; (7) Fundamental studies on the properties of the Ga(x)Al(1-x)As system.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1968
Accession Number
AD0668930

Entities

People

  • G. L. Pearson
  • James F. Gibbons

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Electrical Properties
  • Gallium
  • Gallium Arsenides
  • Gamma Rays
  • P-N Junctions
  • Point Defects
  • Radiation
  • Semiconductors
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics