CATALYTIC PROPERTIES OF SEMICONDUCTORS.

Abstract

The design of a high vacuum flow reactor for investigating the catalytic activity and surface chemical composition of clean surfaces is described. Results obtained applying such a system to the study of the interaction between clean silicon and germanium surfaces and ethanol and formic acid vapors are reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1968
Accession Number
AD0669691

Entities

People

  • Charles W. Selvidge
  • Raymond F. Baddour

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Composition
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Formic Acid
  • Germanium
  • High Vacuum
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Vacuum

Readers

  • Combustion science or combustion engineering.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene