THE FRENKEL EFFECT IN SEMICONDUCTOR DIODES.

Abstract

One of the possible alternate ways is chosen to explain the voltage-dependence of reverse current observed experimentally under certain conditions in germanium and silicon diodes. The explanation is based on the assumption that in the volume charge regions of a p-n junction the probability of generating electrons and holes by recombination centers is increased with reverse voltage because thermal ionization is facilitated by the electric field. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1968
Accession Number
AD0669936

Entities

People

  • V. I. Gaman

Organizations

  • Johns Hopkins University Applied Physics Laboratory

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Compound Semiconductors
  • Diodes
  • Electric Fields
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Electrons
  • Extrinsic Semiconductors
  • Germanium
  • Ionization
  • P-N Junctions
  • Probability
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductors

Readers

  • Combustion science or combustion engineering.
  • Electronics Engineering
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics